IGBT（Insulated Gate Bipolar Transistor），絕緣柵雙極型晶體管，是由BJT（雙極型三極管）和MOS（絕緣柵型場(chǎng)效應(yīng)管）組成的復(fù)合全控型電壓驅(qū)動(dòng)式功率半導(dǎo)體器件, 兼有MOSFET的高輸入阻抗和GTR的低導(dǎo)通壓降兩方面的優(yōu)點(diǎn)。GTR飽和壓降低，載流密度大，但驅(qū)動(dòng)電流較大;MOSFET驅(qū)動(dòng)功率很小，開關(guān)速度快，但導(dǎo)通壓降大，載流密度小

產(chǎn)品型號(hào)：BSM200GB120DN2
廠商性質(zhì)：經(jīng)銷商
更新時(shí)間：2024-01-19
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詳細(xì)介紹

北京京誠宏泰科技原裝正品現(xiàn)貨銷售英飛凌IGBT模塊BSM200GB120DN2

集電極—射極擊穿電壓: 1200 V

集電極—射極飽和電壓: 3.2 V

集電極zui大連續(xù)電流 Ic: 200 A

柵極—射極漏泄電流: 400 nA

功率耗散: 1.4 KW

封裝 / 箱體: IS5a ( 62 mm )

集電極—發(fā)射極zui大電壓 VCEO: 1200 V

柵極/發(fā)射極zui大電壓: 20 V

zui大工作溫度: + 125℃

zui小工作溫度: - 40℃

適用于電焊機(jī) 感應(yīng)加熱高頻率等高頻硬開關(guān)

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